Semiconductors
HY5012W HUAYI Inventory and RFQ Quote
125V 300A 500W 2.9mΩ@10V,150A 3V@250uA 1PCSNChannel TO-247A-3L MOSFETs ROHS HY5012W HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HY5012W
- Brand
- HUAYI
- Qty
- 587000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
125V 300A 500W 2.9mΩ@10V,150A 3V@250uA 1PCSNChannel TO-247A-3L MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 125V
- Continuous Drain Current (Id): 300A
- Power Dissipation (Pd): 500W
- Drain Source On Resistance (RDS(on)@Vgs: 2.9mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 930pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 16.3nF@25V
- Total Gate Charge (Qg@Vgs): 352nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)