Semiconductors
HY045N10B HUAYI Inventory and RFQ Quote
100V 120A 5mΩ@10V,50A 221W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS HY045N10B HUAYI TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HY045N10B
- Brand
- HUAYI
- Qty
- 588000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 120A 5mΩ@10V,50A 221W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 120A
- Drain Source On Resistance (RDS(on)@Vgs: 5mΩ@10V
- Power Dissipation (Pd): 221W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N