Semiconductors
HSBB02P15 HUASHUO Inventory and RFQ Quote
150V 2A 640mΩ@10V,1A 7.7W 3V@250uA 1 Piece P-Channel PQFN-8(3x3) MOSFETs ROHS HSBB02P15 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBB02P15
- Brand
- HUASHUO
- Qty
- 588000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
150V 2A 640mΩ@10V,1A 7.7W 3V@250uA 1 Piece P-Channel PQFN-8(3x3) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 2A
- Drain Source On Resistance (RDS(on)@Vgs: 640mΩ@10V
- Power Dissipation (Pd): 7.7W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 23pF@75V
- Type: 1 P
- Input Capacitance (Ciss@Vds): 400pF@75V
- Total Gate Charge (Qg@Vgs): 4.5nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)