Semiconductors
HY1908D HUAYI Inventory and RFQ Quote
80V 90A 9mΩ@10V,45A 64W 4V@250uA 1PCSNChannel TO-252-2(DPAK) MOSFETs ROHS HY1908D HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HY1908D
- Brand
- HUAYI
- Qty
- 589000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
80V 90A 9mΩ@10V,45A 64W 4V@250uA 1PCSNChannel TO-252-2(DPAK) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 90A
- Drain Source On Resistance (RDS(on)@Vgs: 9mΩ@10V
- Power Dissipation (Pd): 64W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N