Semiconductors
HSH0076A HUASHUO Inventory and RFQ Quote
100V 308A 2.2mΩ@10V,30A 430W 4V@250uA 1PCSNChannel TO-263 MOSFETs ROHS HSH0076A HUASHUO TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSH0076A
- Brand
- HUASHUO
- Qty
- 550000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 308A 2.2mΩ@10V,30A 430W 4V@250uA 1PCSNChannel TO-263 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 308A
- Drain Source On Resistance (RDS(on)@Vgs: 2.2mΩ@10V
- Power Dissipation (Pd): 430W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 388pF@50V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 13.37nF@50V
- Total Gate Charge (Qg@Vgs): 200nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)