Semiconductors
HGTH20N50E1 Harris Corporation Inventory and RFQ Quote
100W 20A 500V TO-218 IGBT Transistors / Modules ROHS HGTH20N50E1 Harris Corporation TO218 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HGTH20N50E1
- Brand
- Harris Corporation
- Qty
- 550000
- Package
- TO218
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100W 20A 500V TO-218 IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Power Dissipation (Pd): 100W
- Operating Temperature: -55℃~+150℃@(Tj)
- Collector Current (Ic): 20A
- Collector-Emitter Breakdown Voltage (Vces): 500V
- Input Capacitance (Cies@Vce): -
- Type: -
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3.2V@20V
- Total Gate Charge (Qg@Ic: 33nC
- Turn?on Switching Loss (Eon): -