Semiconductors
HSCB20D03 HUASHUO Inventory and RFQ Quote
20V 3A 900mΩ@4.5V,3A 1.5W 750mV@250uA 2 P-Channel DFN-6-EP(2x2) MOSFETs ROHS HSCB20D03 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSCB20D03
- Brand
- HUASHUO
- Qty
- 551000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
20V 3A 900mΩ@4.5V,3A 1.5W 750mV@250uA 2 P-Channel DFN-6-EP(2x2) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 3A
- Drain Source On Resistance (RDS(on)@Vgs: 900mΩ@4.5V
- Power Dissipation (Pd): 1.5W
- Gate Threshold Voltage (Vgs(th)@Id): 750mV@250uA
- Reverse Transfer Capacitance (Crss@Vds): 37pF@10V
- Type: 2 P
- Input Capacitance (Ciss@Vds): 331pF@10V
- Total Gate Charge (Qg@Vgs): 3.3nC@4.5V
- Operating Temperature: -55℃~+150℃@(Tj)