Semiconductors
VBE2610N VBsemi Elec Inventory and RFQ Quote
60V 30A 61mΩ@10V,5A 3V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS VBE2610N VBsemi Elec TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- VBE2610N
- Brand
- VBsemi Elec
- Qty
- 529000
- Package
- TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 30A 61mΩ@10V,5A 3V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 30A
- Drain Source On Resistance (RDS(on)@Vgs: 61mΩ@10V
- Power Dissipation (Pd): -
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1 P