Semiconductors
TTC014,L1NV Toshiba Semiconductor and Storage Inventory and RFQ Quote
800V 1W 100@100mA,5V 1A NPN - Bipolar (BJT) ROHS TTC014,L1NV Toshiba Semiconductor and Storage Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- TTC014,L1NV
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 529000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
800V 1W 100@100mA,5V 1A NPN - Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 800V
- Power Dissipation (Pd): 1W
- DC Current Gain (hFE@Ic: 100@100mA
- Collector Current (Ic): 1A
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 1V@50mA