Semiconductors
SUD19P06-60-BE3 Vishay Siliconix Inventory and RFQ Quote
60V 18.3A 60mΩ@10V,10A 3V@250uA 1 Piece P-Channel TO-252AA MOSFETs ROHS SUD19P06-60-BE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SUD19P06-60-BE3
- Brand
- Vishay Siliconix
- Qty
- 530000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 18.3A 60mΩ@10V,10A 3V@250uA 1 Piece P-Channel TO-252AA MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 18.3A
- Drain Source On Resistance (RDS(on)@Vgs: 60mΩ@10V
- Power Dissipation (Pd): 2.3W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1 P
- Input Capacitance (Ciss@Vds): 1.71nF@25V
- Total Gate Charge (Qg@Vgs): 40nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)