Semiconductors
SIR662DP-T1-GE3 Vishay Siliconix Inventory and RFQ Quote
MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET SIR662DP-T1-GE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SIR662DP-T1-GE3
- Brand
- Vishay Siliconix
- Qty
- 530000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel
- Package / Case: PowerPAK-SO-8
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Width: 5.15 mm
- Qg - Gate Charge: 96 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: SIR662DP-GE3
- Fall Time: 11 ns
- Mounting Style: SMD/SMT