Semiconductors
STGB6M65DF2 STMicroelectronics Inventory and RFQ Quote
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss STGB6M65DF2 STMicroelectronics Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- STGB6M65DF2
- Brand
- STMicroelectronics
- Qty
- 528000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > IGBT Transistors
- Reference Source
- Mouser
Key Specifications
- Gate-Emitter Leakage Current: +/- 250 uA
- Collector-Emitter Saturation Voltage: 1.55 V
- Product Category: IGBT Transistors
- Subcategory: IGBTs
- Series: STGB6M65DF2
- Continuous Collector Current Ic Max: 12 A
- Maximum Operating Temperature: + 175 C
- Brand: STMicroelectronics
- Pd - Power Dissipation: 88 W
- Continuous Collector Current at 25 C: 12 A