Semiconductors
STB7ANM60N STMicroelectronics Inventory and RFQ Quote
MOSFET N-CH 600V 5A 0.84Ohm MDmesh II STB7ANM60N STMicroelectronics D²PAK / TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- STB7ANM60N
- Brand
- STMicroelectronics
- Qty
- 528000
- Package
- D²PAK / TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-CH 600V 5A 0.84Ohm MDmesh II
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 900 mOhms
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 3 V
- Qg - Gate Charge: 14 nC
- Vgs - Gate-Source Voltage: 25 V
- Fall Time: 12 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET