Power
SQS407ENW-T1-GE3 Diodes Incorporated Inventory and RFQ Quote
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8W SQS407ENW-T1-GE3 Diodes Incorporated POWERPAK1212-8W Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SQS407ENW-T1-GE3
- Brand
- Diodes Incorporated
- Qty
- 510000
- Package
- POWERPAK1212-8W
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8W
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: P-Channel
- Package / Case: PowerPAK-1212-8W
- Vgs th - Gate-Source Threshold Voltage: 1.5 V
- Qg - Gate Charge: 77 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 24 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: Vishay / Siliconix