Semiconductors
SQJ140EP-T1_GE3 Vishay Siliconix Inventory and RFQ Quote
40V 266A 2.1mΩ@15A,10V 263W 3.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS SQJ140EP-T1_GE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SQJ140EP-T1_GE3
- Brand
- Vishay Siliconix
- Qty
- 510000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 266A 2.1mΩ@15A,10V 263W 3.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 266A
- Drain Source On Resistance (RDS(on)@Vgs: 2.1mΩ@15A
- Power Dissipation (Pd): 263W
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 3.855nF@25V
- Total Gate Charge (Qg@Vgs): 64nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)