Semiconductors
SIHD4N80E-GE3 Vishay Siliconix Inventory and RFQ Quote
MOSFET 800V Vds 30V Vgs DPAK (TO-252) SIHD4N80E-GE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SIHD4N80E-GE3
- Brand
- Vishay Siliconix
- Qty
- 539000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 800V Vds 30V Vgs DPAK (TO-252)
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- New At Mouser
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 800 V
- Transistor Polarity: N-Channel
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Qg - Gate Charge: 16 nC
- Vgs - Gate-Source Voltage: 10 V
- Fall Time: 20 ns
- Product Category: MOSFET
- Brand: Vishay / Siliconix
- Number of Channels: 1 Channel