Transistor
SIHD2N80AE-GE3 Vishay Siliconix Inventory and RFQ Quote
MOSFET Nch 800V Vds 30V Vgs TO-252 (DPAK) SIHD2N80AE-GE3 Vishay Siliconix Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SIHD2N80AE-GE3
- Brand
- Vishay Siliconix
- Qty
- 539000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
MOSFET Nch 800V Vds 30V Vgs TO-252 (DPAK)
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 800 V
- Transistor Polarity: N-Channel
- Package / Case: TO-252
- Vgs th - Gate-Source Threshold Voltage: 4 V
- Qg - Gate Charge: 7 nC
- Vgs - Gate-Source Voltage: 30 V
- Fall Time: 23 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: Vishay / Siliconix