Diode
S-LBSS5250Y3T1G Texas Instruments Inventory and RFQ Quote
50V 550mW 180@50mA,2V 2A PNP SOT-89-3 Bipolar (BJT) ROHS S-LBSS5250Y3T1G Texas Instruments Diode advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- S-LBSS5250Y3T1G
- Brand
- Texas Instruments
- Qty
- 526000
- Package
- Date Code
- 25+
- Alternative
- Category
- Diode
Technical Overview
50V 550mW 180@50mA,2V 2A PNP SOT-89-3 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 550mW
- DC Current Gain (hFE@Ic: 180@50mA
- Collector Current (Ic): 2A
- Transition Frequency (fT): 320MHz
- Transistor Type: PNP
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 200mV@700mA
- Operating Temperature: -55℃~+150℃@(Tj)