Semiconductors
RU6199S-R Diodes Incorporated Inventory and RFQ Quote
60V 200A 2.8mΩ@10V,75A 300W 4V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS RU6199S-R Diodes Incorporated TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- RU6199S-R
- Brand
- Diodes Incorporated
- Qty
- 526000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 200A 2.8mΩ@10V,75A 300W 4V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 200A
- Drain Source On Resistance (RDS(on)@Vgs: 2.8mΩ@10V
- Power Dissipation (Pd): 300W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 490pF@30V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 5.8nF@30V
- Total Gate Charge (Qg@Vgs): 155nC@10V
- Operating Temperature: -