Power
RFP2N12 Harris Corporation Inventory and RFQ Quote
120V 2A 1.75Ω@2A,10V 25W 4V@250uA 1 N-Channel TO-220-3 MOSFETs ROHS RFP2N12 Harris Corporation to-220 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- RFP2N12
- Brand
- Harris Corporation
- Qty
- 521000
- Package
- to-220
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
120V 2A 1.75Ω@2A,10V 25W 4V@250uA 1 N-Channel TO-220-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 120V
- Continuous Drain Current (Id): 2A
- Drain Source On Resistance (RDS(on)@Vgs: 1.75Ω@2A
- Power Dissipation (Pd): 25W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 200pF@25V
- Operating Temperature: -55℃~+150℃@(Tj)