RF & Wireless
RFD3N08L Harris Corporation Inventory and RFQ Quote
80V 3A 30W 800mΩ@1.5A,5V 2.5V@250uA 1PCSNChannel IPAK MOSFETs ROHS RFD3N08L Harris Corporation IPAK / TO-251 RF & Wireless advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- RFD3N08L
- Brand
- Harris Corporation
- Qty
- 521000
- Package
- IPAK / TO-251
- Date Code
- 25+
- Alternative
- Category
- RF & Wireless
Technical Overview
80V 3A 30W 800mΩ@1.5A,5V 2.5V@250uA 1PCSNChannel IPAK MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 3A
- Power Dissipation (Pd): 30W
- Drain Source On Resistance (RDS(on)@Vgs: 800mΩ@1.5A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1 N
- Total Gate Charge (Qg@Vgs): 8nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)