RF & Wireless
RFM25N06 Harris Corporation Inventory and RFQ Quote
60V 25A 70mΩ@12.5A,10V 100W 4V@1mA 1PCSNChannel TO-3 MOSFETs ROHS RFM25N06 Harris Corporation TO-3 RF & Wireless advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- RFM25N06
- Brand
- Harris Corporation
- Qty
- 549000
- Package
- TO-3
- Date Code
- 25+
- Alternative
- Category
- RF & Wireless
Technical Overview
60V 25A 70mΩ@12.5A,10V 100W 4V@1mA 1PCSNChannel TO-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 25A
- Drain Source On Resistance (RDS(on)@Vgs: 70mΩ@12.5A
- Power Dissipation (Pd): 100W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@1mA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.7nF@25V
- Operating Temperature: -55℃~+150℃@(Tj)