Power
HGTP10N40F1D Harris Corporation Inventory and RFQ Quote
75W 12A 400V TO-220 IGBT Transistors / Modules ROHS HGTP10N40F1D Harris Corporation TO-220 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HGTP10N40F1D
- Brand
- Harris Corporation
- Qty
- 549000
- Package
- TO-220
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
75W 12A 400V TO-220 IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Power Dissipation (Pd): 75W
- Operating Temperature: -55℃~+150℃@(Tj)
- Collector Current (Ic): 12A
- Collector-Emitter Breakdown Voltage (Vces): 400V
- Input Capacitance (Cies@Vce): -
- Type: -
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.5V@10V
- Total Gate Charge (Qg@Ic: 13.4nC
- Turn?on Switching Loss (Eon): -