Semiconductors
NCEP01ND35AG Diodes Incorporated Inventory and RFQ Quote
100V 35A 18mΩ@10V,20A 50W 2V@250uA 2 N-Channel DFN-8(4.9x5.8) MOSFETs ROHS NCEP01ND35AG Diodes Incorporated DFN5x6 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NCEP01ND35AG
- Brand
- Diodes Incorporated
- Qty
- 551000
- Package
- DFN5x6
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 35A 18mΩ@10V,20A 50W 2V@250uA 2 N-Channel DFN-8(4.9x5.8) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 35A
- Drain Source On Resistance (RDS(on)@Vgs: 18mΩ@10V
- Power Dissipation (Pd): 50W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 11pF@50V
- Type: 2 N
- Input Capacitance (Ciss@Vds): 1.6nF@50V
- Total Gate Charge (Qg@Vgs): 26nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)