Semiconductors
MT3S113(TE85L,F) Toshiba Semiconductor and Storage Inventory and RFQ Quote
RF Bipolar Transistors RF Bipolar Transistor .1A 800mW MT3S113(TE85L,F) Toshiba Semiconductor and Storage Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MT3S113(TE85L,F)
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 551000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
RF Bipolar Transistors RF Bipolar Transistor .1A 800mW
- Source Category
- Semiconductors > Wireless & RF Semiconductors > Transistors RF > RF Bipolar Transistors
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: NPN
- Emitter- Base Voltage VEBO: 0.6 V
- Package / Case: TO-236-3
- Packaging: Reel
- Product Category: RF Bipolar Transistors
- DC Collector/Base Gain hfe Min: 200
- Collector- Emitter Voltage VCEO Max: 5.3 V
- Configuration: Single
- Maximum Operating Temperature: + 150 C
- Manufacturer: Toshiba