Semiconductors
NCE40H21 Texas Instruments Inventory and RFQ Quote
40V 210A 2.3mΩ@10V,20A 310W 1.8V@250uA 1PCSNChannel TO-220 MOSFETs ROHS NCE40H21 Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NCE40H21
- Brand
- Texas Instruments
- Qty
- 535000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 210A 2.3mΩ@10V,20A 310W 1.8V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 210A
- Drain Source On Resistance (RDS(on)@Vgs: 2.3mΩ@10V
- Power Dissipation (Pd): 310W
- Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 1.045nF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 10.331nF@25V
- Total Gate Charge (Qg@Vgs): 239nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)