Semiconductors
NCE30D2519K JSMSEMI Inventory and RFQ Quote
30V 8.5mΩ@10V,7A 21W 2V@250uA 1PCSNChannel+1PCSPChannel TO-252-4 MOSFETs ROHS NCE30D2519K JSMSEMI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NCE30D2519K
- Brand
- JSMSEMI
- Qty
- 535000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 8.5mΩ@10V,7A 21W 2V@250uA 1PCSNChannel+1PCSPChannel TO-252-4 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): -
- Drain Source On Resistance (RDS(on)@Vgs: 8.5mΩ@10V
- Power Dissipation (Pd): 21W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 90pF@15V
- Type: 1 N +1 P
- Input Capacitance (Ciss@Vds): 450pF@15V
- Total Gate Charge (Qg@Vgs): 9.5nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)