Semiconductors
NCE01P03S JSMSEMI Inventory and RFQ Quote
100V 3A 170mΩ@10V,3A 2.5W 1.9V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS NCE01P03S JSMSEMI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NCE01P03S
- Brand
- JSMSEMI
- Qty
- 521000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 3A 170mΩ@10V,3A 2.5W 1.9V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 3A
- Drain Source On Resistance (RDS(on)@Vgs: 170mΩ@10V
- Power Dissipation (Pd): 2.5W
- Gate Threshold Voltage (Vgs(th)@Id): 1.9V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 170pF@25V
- Type: 1 P
- Input Capacitance (Ciss@Vds): 760pF@25V
- Total Gate Charge (Qg@Vgs): 25nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)