Semiconductors
NCE30H12 JSMSEMI Inventory and RFQ Quote
30V 120A 3mΩ@10V,20A 120W 1.6V@250uA 1PCSNChannel TO-220 MOSFETs ROHS NCE30H12 JSMSEMI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NCE30H12
- Brand
- JSMSEMI
- Qty
- 522000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 120A 3mΩ@10V,20A 120W 1.6V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 120A
- Drain Source On Resistance (RDS(on)@Vgs: 3mΩ@10V
- Power Dissipation (Pd): 120W
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 120pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 3.55nF@25V
- Total Gate Charge (Qg@Vgs): 48nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)