Transistor
MMBT1616AG-G-AE3-R UTC(Unisonic Tech) Inventory and RFQ Quote
60V 350mW 200@100mA,2V 1A NPN SOT-23 Bipolar (BJT) ROHS MMBT1616AG-G-AE3-R UTC(Unisonic Tech) Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MMBT1616AG-G-AE3-R
- Brand
- UTC(Unisonic Tech)
- Qty
- 520000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
60V 350mW 200@100mA,2V 1A NPN SOT-23 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE@Ic: 200@100mA
- Collector Current (Ic): 1A
- Transition Frequency (fT): 160MHz
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 150mV@1A
- Operating Temperature: -