Semiconductors
MJD31CH-QJ Nexperia USA Inc. Inventory and RFQ Quote
100V 1.6W 120@20mA,6V 3A NPN DPAK Bipolar (BJT) ROHS MJD31CH-QJ Nexperia USA Inc. Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MJD31CH-QJ
- Brand
- Nexperia USA Inc.
- Qty
- 520000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 1.6W 120@20mA,6V 3A NPN DPAK Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 100V
- Power Dissipation (Pd): 1.6W
- DC Current Gain (hFE@Ic: 120@20mA
- Collector Current (Ic): 3A
- Transition Frequency (fT): 3MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 1.2V@375mA
- Transistor Type: NPN