Semiconductors
BUK962R8-60E,118 Nexperia USA Inc. Inventory and RFQ Quote
MOSFET N-channel TrenchMOS logic level FET BUK962R8-60E,118 Nexperia USA Inc. Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BUK962R8-60E,118
- Brand
- Nexperia USA Inc.
- Qty
- 520000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-channel TrenchMOS logic level FET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 2.29 mOhms
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 1.7 V
- Qg - Gate Charge: 96 nC
- Vgs - Gate-Source Voltage: 15 V
- Fall Time: 81 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET