Power
IRFU222 Harris Corporation Inventory and RFQ Quote
200V 3.8A 1.2Ω@2.4A,10V 50W 4V@250uA 1 N-Channel IPAK MOSFETs ROHS IRFU222 Harris Corporation TO-251 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IRFU222
- Brand
- Harris Corporation
- Qty
- 538000
- Package
- TO-251
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
200V 3.8A 1.2Ω@2.4A,10V 50W 4V@250uA 1 N-Channel IPAK MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 3.8A
- Drain Source On Resistance (RDS(on)@Vgs: 1.2Ω@2.4A
- Power Dissipation (Pd): 50W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 330pF@25V
- Total Gate Charge (Qg@Vgs): 18nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)