Power
IRF442 Harris Corporation Inventory and RFQ Quote
500V 7A 125W 1.1Ω@4.4A,10V 4V@250uA 1PCSNChannel TO-3 MOSFETs ROHS IRF442 Harris Corporation TO-3 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IRF442
- Brand
- Harris Corporation
- Qty
- 539000
- Package
- TO-3
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
500V 7A 125W 1.1Ω@4.4A,10V 4V@250uA 1PCSNChannel TO-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 7A
- Power Dissipation (Pd): 125W
- Drain Source On Resistance (RDS(on)@Vgs: 1.1Ω@4.4A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.225nF@25V
- Total Gate Charge (Qg@Vgs): 63nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)