Power
IRF647 Harris Corporation Inventory and RFQ Quote
275V 13A 125W 340mΩ@8A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS IRF647 Harris Corporation TO-220 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IRF647
- Brand
- Harris Corporation
- Qty
- 544000
- Package
- TO-220
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
275V 13A 125W 340mΩ@8A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 275V
- Continuous Drain Current (Id): 13A
- Power Dissipation (Pd): 125W
- Drain Source On Resistance (RDS(on)@Vgs: 340mΩ@8A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.3nF@25V
- Total Gate Charge (Qg@Vgs): 59nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)