Semiconductors
HGTD3N60B3 Harris Corporation Inventory and RFQ Quote
33.3W 7A 600V IPAK IGBT Transistors / Modules ROHS HGTD3N60B3 Harris Corporation IPAK / TO-251 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HGTD3N60B3
- Brand
- Harris Corporation
- Qty
- 545000
- Package
- IPAK / TO-251
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
33.3W 7A 600V IPAK IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Turn?off Delay Time (Td(off)): 105ns
- Power Dissipation (Pd): 33.3W
- Turn?on Delay Time (Td(on)): 18ns
- Operating Temperature: -55℃~+150℃@(Tj)
- Collector Current (Ic): 7A
- Collector-Emitter Breakdown Voltage (Vces): 600V
- Input Capacitance (Cies@Vce): -
- Type: -
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V
- Total Gate Charge (Qg@Ic: 21nC