Power
IRF640NS Minos Inventory and RFQ Quote
200V 18A 130mΩ@10V,7.5A 130W 4V@250uA 1 N-Channel TO-263 MOSFETs ROHS IRF640NS Minos Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IRF640NS
- Brand
- Minos
- Qty
- 519000
- Package
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
200V 18A 130mΩ@10V,7.5A 130W 4V@250uA 1 N-Channel TO-263 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 18A
- Drain Source On Resistance (RDS(on)@Vgs: 130mΩ@10V
- Power Dissipation (Pd): 130W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 130pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.32nF@25V
- Total Gate Charge (Qg@Vgs): 23nC@10V
- Operating Temperature: -55℃~+150℃