Power
IPP65R190C7 Infineon Technologies Inventory and RFQ Quote
MOSFET HIGH POWER_NEW IPP65R190C7 Infineon Technologies TO-220 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPP65R190C7
- Brand
- Infineon Technologies
- Qty
- 519000
- Package
- TO-220
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET HIGH POWER_NEW
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 650 V
- Transistor Polarity: N-Channel
- Package / Case: TO-220-3
- Vgs th - Gate-Source Threshold Voltage: 3 V
- Width: 4.4 mm
- Qg - Gate Charge: 23 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPP65R190C7FKSA1 SP000929426
- Fall Time: 9 ns
- Mounting Style: Through Hole