Power
IRF610PBF Vishay Siliconix Inventory and RFQ Quote
MOSFET N-CH 200V HEXFET MOSFET IRF610PBF Vishay Siliconix Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IRF610PBF
- Brand
- Vishay Siliconix
- Qty
- 582000
- Package
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET N-CH 200V HEXFET MOSFET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 200 V
- Transistor Polarity: N-Channel
- Package / Case: TO-220AB-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Qg - Gate Charge: 8.2 nC
- Vgs - Gate-Source Voltage: 10 V
- Fall Time: 8.9 ns
- Mounting Style: Through Hole
- Product Category: MOSFET
- Brand: Vishay / Siliconix