Semiconductors
SQ3585EV-T1-GE3 Vishay Siliconix Inventory and RFQ Quote
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified SQ3585EV-T1-GE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SQ3585EV-T1-GE3
- Brand
- Vishay Siliconix
- Qty
- 583000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 20 V
- Transistor Polarity: N-Channel, P-Channel
- Rds On - Drain-Source Resistance: 49 mOhms, 140 mOhms
- Package / Case: TSOP-6
- Vgs th - Gate-Source Threshold Voltage: 600 mV, 1.5 V
- Qg - Gate Charge: 2.5 nC, 3.5 nC
- Vgs - Gate-Source Voltage: 12 V
- Fall Time: 8 ns, 14 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET