Transistor
IPP147N12N3 G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 120V 56A TO220-3 OptiMOS 3 IPP147N12N3 G Infineon Technologies Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPP147N12N3 G
- Brand
- Infineon Technologies
- Qty
- 597000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
MOSFET N-Ch 120V 56A TO220-3 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 120 V
- Transistor Polarity: N-Channel
- Package / Case: TO-220-3
- Width: 4.4 mm
- Qg - Gate Charge: 37 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPP147N12N3GXK IPP147N12N3GXKSA1 SP000652742
- Fall Time: 4 nS
- Mounting Style: Through Hole
- Product Category: MOSFET