Semiconductors
IPD65R660CFDBTMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-CH 650V 6A TO252-3 IPD65R660CFDBTMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD65R660CFDBTMA1
- Brand
- Infineon Technologies
- Qty
- 597000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-CH 650V 6A TO252-3
- Source Category
- ["Discrete Semiconductor Products", "Transistors", "FETs, MOSFETs", "Single FETs, MOSFETs"]
- Reference Source
- DigiKey
Key Specifications
- Mfr: Infineon Technologies
- Series: CoolMOS™
- Package: Tape & Reel (TR)
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V