Semiconductors
IPD25DP06NM Infineon Technologies Inventory and RFQ Quote
60V 6.5A 28W 250mΩ@10V,6.5A 4V@270uA 1 Piece P-Channel TO-252-3 MOSFETs ROHS IPD25DP06NM Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD25DP06NM
- Brand
- Infineon Technologies
- Qty
- 597000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 6.5A 28W 250mΩ@10V,6.5A 4V@270uA 1 Piece P-Channel TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 6.5A
- Power Dissipation (Pd): 28W
- Drain Source On Resistance (RDS(on)@Vgs: 250mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@270uA
- Type: 1 P