Semiconductors
IPB60R099CP Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP IPB60R099CP Infineon Technologies TO263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB60R099CP
- Brand
- Infineon Technologies
- Qty
- 597000
- Package
- TO263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- NRND: Not recommended for new designs.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 2.5 V
- Width: 9.25 mm
- Qg - Gate Charge: 80 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB60R099CPATMA1 IPB6R99CPXT SP000088490
- Type: 600 V CoolMOS C6 Power Transistor
- Fall Time: 5 ns