Semiconductors
IPB020NE7N3 G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 IPB020NE7N3 G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB020NE7N3 G
- Brand
- Infineon Technologies
- Qty
- 597000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 75 V
- Transistor Polarity: N-Channel
- Package / Case: PG-TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 2.3 V
- Width: 9.25 mm
- Qg - Gate Charge: 155 nC
- Vgs - Gate-Source Voltage: 10 V
- Part # Aliases: IPB020NE7N3GATMA1 IPB2NE7N3GXT SP000676950
- Type: OptiMOS 3 Power-Transistor
- Fall Time: 22 ns