Semiconductors
IPL60R185C7AUMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET HIGH POWER_NEW IPL60R185C7AUMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPL60R185C7AUMA1
- Brand
- Infineon Technologies
- Qty
- 596000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET HIGH POWER_NEW
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: VSON-4
- Vgs th - Gate-Source Threshold Voltage: 3 V
- Width: 8 mm
- Qg - Gate Charge: 24 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPL60R185C7 SP001296238
- Fall Time: 6 ns
- Mounting Style: SMD/SMT