Semiconductors
IPD78CN10N G Infineon Technologies Inventory and RFQ Quote
POWER FIELD-EFFECT TRANSISTOR, 1 IPD78CN10N G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD78CN10N G
- Brand
- Infineon Technologies
- Qty
- 596000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
POWER FIELD-EFFECT TRANSISTOR, 1
- Source Category
- ["Discrete Semiconductor Products", "Transistors - FETs, MOSFETs - Single"]
- Reference Source
- DigiKey
Key Specifications
- Mfr: Infineon Technologies
- Series: OptiMOS™ 2
- Package: Bulk
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V