Semiconductors
IPG20N06S2L-65 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 55V 20A TDSON-8 OptiMOS IPG20N06S2L-65 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPG20N06S2L-65
- Brand
- Infineon Technologies
- Qty
- 587000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 55V 20A TDSON-8 OptiMOS
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 55 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 65 mOhms
- Package / Case: TDSON-8
- Width: 5.15 mm
- Qg - Gate Charge: 9.4 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPG20N06S2L65ATMA1 IPG2N6S2L65XT SP000613722
- Fall Time: 7 nS
- Mounting Style: SMD/SMT