Semiconductors
IPD65R660CFD Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2 IPD65R660CFD Infineon Technologies TO252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD65R660CFD
- Brand
- Infineon Technologies
- Qty
- 587000
- Package
- TO252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 650 V
- Transistor Polarity: N-Channel
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 4 V
- Width: 6.22 mm
- Qg - Gate Charge: 22 nC
- Vgs - Gate-Source Voltage: 30 V
- Part # Aliases: IPD65R660CFDBTMA1 IPD65R66CFDXT SP000745024
- Fall Time: 10 ns
- Mounting Style: SMD/SMT