Semiconductors
IPB065N10N3G Infineon Technologies Inventory and RFQ Quote
100V 80A 150W 6.5mΩ@10V,80A 3.5V@90uA 1PCSNChannel TO-263-2 MOSFETs ROHS IPB065N10N3G Infineon Technologies TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB065N10N3G
- Brand
- Infineon Technologies
- Qty
- 587000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 80A 150W 6.5mΩ@10V,80A 3.5V@90uA 1PCSNChannel TO-263-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 80A
- Power Dissipation (Pd): 150W
- Drain Source On Resistance (RDS(on)@Vgs: 6.5mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@90uA
- Type: 1 N